CMPT5551HC Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR

CMPT5551HC
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5551HC
type is a high current NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage and high current amplifier
applications.
SOT-23 CASE
MARKING CODE: 1FHC
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
180
160
6.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=4.0V
BVCBO
IC=100µA
180
BVCEO
IC=1.0mA
160
BVEBO
IE=10µA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
hFE
VCE=5.0V, IC=50mA
30
hFE
VCE=10V, IC=1.0A
fT
VCE=10V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
TYP MAX
50
50
50
0.15
0.20
1.00
1.00
250
10
15
UNITS
V
V
V
A
mW
°C
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
R0 (28-January 2005)