CMPT5551E_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR

CMPT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5551E is an
NPN Silicon Transistor, packaged in an SOT-23 case,
designed for general purpose amplifier applications
requiring high breakdown voltage and small space
saving packaging.
MARKING CODE: C555
FEATURES:
SOT-23 CASE
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA Max
APPLICATIONS:
• Low Saturation Voltage 100mV Max @ 50mA
• General purpose switching and amplification • Complementary Device CMPT5401E
• Telephone applications
• SOT-23 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦Collector-Base Voltage
♦Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
250
220
6.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=4.0V
♦BVCBO
IC=100µA
250
♦BVCEO
IC=1.0mA
220
BVEBO
IE=10μA
6.0
♦VCE(SAT)
IC=10mA, IB=1.0mA
♦VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
♦hFE
VCE=5.0V, IC=1.0mA
120
♦hFE
VCE=5.0V, IC=10mA
120
♦hFE
VCE=5.0V, IC=50mA
75
♦hFE
VCE=10V, IC=150mA
25
fT
VCE=10V, IC=10mA, f=100MHz
100
♦ Enhanced specification
MAX
50
50
50
75
100
1.00
1.00
300
300
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
MHz
R1 (1-February 2010)