CMPT5087E_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMPT5087E PNP
CMPT5088E NPN
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
♦Collector-Base Voltage
♦Collector-Emitter Voltage
♦Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5087E
and CMPT5088E, are Silicon transistors in an epoxy
molded surface mount package with enhanced
specifications designed for applications requiring high
gain and low noise.
MARKING CODES: CMPT5087E: C2QE
CMPT5088E: C1QE
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
50
50
5.0
100
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=20V
IEBO
VEB=3.0V
♦♦♦^{BBBVCVVVCCEEB(BESOOOAT)}
IC=100µA
IC=1.0mA
IE=100µA
IC=10mA, IB=1.0mA
50
50
5.0
♦♦♦_V^V_B^C_E^E₍⁽_S^S_A^A_T^T₎⁾
IC=100mA, IB=10mA
IC=10mA, IB=1.0mA
♦
hFE
hFE
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
300
300
hFE
VCE=5.0V, IC=10mA
300
♦♦♦♦_CfhTFo^E_b
VCE=5.0V, IC=100mA
VCE=5.0V, IC=500µA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
50
100
Cib
VBE=0.5V, IC=0, f=1.0MHz
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
350
NF
VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz
♦ Enhanced specification
♦♦ Additional Enhanced specification
TYP
NPN PNP
135 150
65 105
8.7 7.5
45 50
110 225
700 700
430 390
435 380
430 350
125 75
3.0
MAX
50
50
100
400
800
900
UNITS
nA
nA
V
V
V
mV
mV
mV
4.0
15
1400
dB
MHz
pF
pF
R1 (1-February 2010)