CMPT5086_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

CMPT5086
CMPT5087
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5086 and
CMPT5087 are PNP silicon transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring high gain and low noise.
MARKING CODES: CMPT5086: C2P
CMPT5087: C2Q
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
50
50
3.0
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT5086
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
NF
VCB=10V
VCB=35V
IC=100μA
IC=1.0mA
IE=100μA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=500μA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=20mA, RS=10kΩ,
f=10Hz to 15.7kHz
-
10
-
50
50
-
50
-
3.0 -
- 0.30
- 0.85
150 500
150 -
150 -
40
-
- 4.0
150 600
- 3.0
NF
VCE=5.0V, IC=100μA, RS=3.0kΩ, f=1.0kHz
- 3.0
CMPT5087
MIN MAX
-
10
-
50
50
-
50
-
3.0
-
- 0.30
- 0.85
250 800
250
-
250
-
40
-
-
4.0
250 900
-
2.0
-
2.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
MHz
pF
dB
dB
R5 (1-February 2010)