CMPT5086 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR

CMPT5086
CMPT5087
Central^TM
Semiconductor Corp.
PNP SILICON TRANSISTOR
DESCRIPTION:
SOT-23 CASE
The CENTRAL SEMICONDUCTOR
CMPT5086, CMPT5087 types are PNP silicon
transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for applications
requiring high gain and low noise.
Marking Codes are C2P and C2Q
Respectively.
MAXIMUM RATINGS (TA=25^oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
50
50
3.0
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
SYMBOL
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
TEST CONDITIONS
VCB=10V
VCB=35V
IC=100µA
IC=1.0mA
IE=100µA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=500µA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
CMPT5086
MIN MAX
10
50
50
50
3.0
0.30
0.85
150 500
150
150
40
4.0
150 600
CMPT5087
MIN MAX
10
50
50
50
3.0
0.30
0.85
250 800
250
250
40
4.0
250 900
UNITS
V
V
V
mA
mW
o_C
o_C/W
UNITS
nA
nA
V
V
V
V
V
MHz
pF
178