CMPT4401 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON TRANSISTORS

CMPT4401 NPN
CMPT4403 PNP
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT4401,
CMPT4403 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES:
CMPT4401: C2X
CMPT4403: C2T
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
CMPT4401
60
40
6.0
CMPT4403
40
40
5.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT4401
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
IBEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
VCE=35V, VEB=0.4V
VCE=35V, VEB=0.4V
IC=100µA
IC=1.0mA
IE=100µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
0.1
0.1
60
40
6.0
0.40
0.75
0.75 0.95
1.2
20
40
80
CMPT4403
MIN MAX
0.1
0.1
40
40
5.0
0.40
0.75
0.75 0.95
1.3
30
60
100
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
µA
µA
V
V
V
V
V
V
V
R4 (26-September 2002)