CMPT3904_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMPT3904 CMPT3904G* NPN
CMPT3906 CMPT3906G* PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
complementary silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal general
purpose amplifier and switching applications.
SOT-23 CASE
* Device is Halogen Free by design
MARKING CODES: CMPT3904: C1A
CMPT3906: C2A
CMPT3904G*: CG1
CMPT3906G*: CG2
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
CMPT3904 CMPT3906
CMPT3904G* CMPT3906G*
60
40
40
40
6.0
5.0
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
IBL
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=1.0mA
BVEBO
IE=10μA
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
hFE
VCE=1.0V, IC=0.1mA
hFE
VCE=1.0V, IC=1.0mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=50mA
hFE
VCE=1.0V, IC=100mA
CMPT3904
CMPT3904G*
MIN MAX
-
50
-
50
60
-
40
-
6.0
-
- 0.20
- 0.30
0.65 0.85
- 0.95
40
-
70
-
100 300
60
-
30
-
CMPT3906
CMPT3906G*
MIN MAX
-
50
-
50
40
-
40
-
5.0
-
- 0.25
- 0.40
0.65 0.85
- 0.95
60
-
80
-
100 300
60
-
30
-
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
R7 (1-February 2010)