CMPT3904E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMPT3904E NPN
CMPT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
MARKING CODE: CMPT3904E: C1AE
CMPT3906E: C2AE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3904E and
CMPT3906E are Enhanced versions of the CMPT3904
and CMPT3906 complementary switching transistors in
a SOT-23 surface mount package, designed for small
signal switching applications, interface circuit & driver
circuit applications.
ENHANCED SPECIFICATIONS:
♦ BVCBO from 40V min to 60V min. (CMPT3906E)
♦ BVEBO from 5.0V min to 6.0V min. (CMPT3906E)
♦ VCE(SAT) from 0.3V max to 0.2V max. (CMPT3904E)
from 0.4V max to 0.2V max. (CMPT3906E)
♦ hFE from 60 min to 70 min. (CMPT3904E) (CMPT3906E)
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
Collector-Emitter Voltage
♦ Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
60
40
6.0
200
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT3904E
SYMBOL TEST CONDITIONS
MIN
TYP
ICEV
♦ BVCBO
BVCEO
♦
♦
♦
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
♦ hFE
♦ hFE
hFE
♦ hFE
hFE
VCE=30V, VEB=3.0V
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
60
115
40
60
6.0
7.5
0.057
0.100
0.65
0.75
0.85
90
240
100
235
100
215
70
110
30
50
♦ Enhanced specification
CMPT3906E
TYP
90
55
7.9
0.050
0.100
0.75
0.85
130
150
150
120
55
MAX
50
0.100
0.200
0.85
0.95
300
UNITS
nA
V
V
V
V
V
V
V
R3 (1-February 2010)