CMPT3904 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON TRANSISTORS

CMPT3904 NPN
CMPT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3904,
CMPT3906 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES:
CMPT3904: C1A
CMPT3906: C2A
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
CMPT3904
60
40
6.0
CMPT3906
40
40
5.0
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
SYMBOL
ICEV
IBL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=30V, VEB=3.0V
VCE=30V, VEB=3.0V
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
(TA=25°C unless otherwise noted)
CMPT3904
MIN MAX
50
50
60
40
6.0
0.20
0.30
0.65 0.85
0.95
40
70
100 300
60
30
CMPT3906
MIN MAX
50
50
40
40
5.0
0.25
0.40
0.65 0.85
0.95
60
80
100 300
60
30
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
R4 (26-September 2002)