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CMPT3820_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT VERY LOW NPN SILICON TRANSISTOR
CMPT3820
SURFACE MOUNT
VERY LOW VCE(SAT)
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3820 is
a very low VCE(SAT) NPN Transistor, designed for
applications where size and efficiency are prime
requirements. Packaged in an industry standard
SOT-23, this device brings updated electrical
specifications and characteristics suitable for the
most demanding designs.
SOT-23 CASE
MARKING CODE: 38C
APPLICATIONS:
• DC/DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered Cell Phones, Pagers,
Digital Cameras, PDAs, Laptops, etc.
FEATURES:
• Device is Halogen Free by design
• High Current (IC=1.0A)
• VCE(SAT)=0.28V MAX @ IC=1.0A
• SOT-23 surface mount package
• Complementary PNP device CMPT7820
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJA
80
60
5.0
1.0
2.0
300
350
-65 to +150
357
UNITS
V
V
V
A
A
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=5.0V
BVCBO
IC=100µA
80
BVCEO
IC=10mA
60
BVEBO
IE=100µA
5.0
VCE(SAT)
IC=100mA, IB=1.0mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=50mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
hFE
VCE=5.0V, IC=1.0A
100
fT
VCE=10V, IC=50mA
150
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
100
100
0.115
0.15
0.28
1.1
0.9
10
UNITS
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
R1 (1-February 2010)