CMPT3646_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR

CMPT3646
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3646 type is
an NPN silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for ultra high speed switching
applications.
MARKING CODE: C2R
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
40
40
15
5.0
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICES
VCE=20V
ICES
VCE=20V, TA=65°C
BVCBO
IC=100µA
40
BVCES
IC=10µA
40
BVCEO
IC=10mA
15
BVEBO
IE=100µA
5.0
VCE(SAT) IC=30mA, IB=3.0mA
VCE(SAT) IC=30mA, IB=3.0mA, TA=65°C
VCE(SAT) IC=100mA, IB=10mA
VCE(SAT) IC=300mA, IB=30mA
VBE(SAT) IC=30mA, IB=3.0mA
0.75
VBE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=300mA, IB=30mA
hFE
VCE=0.4V, IC=30mA
30
hFE
VCE=0.5V, IC=100mA
25
hFE
VCE=1.0V, IC=300mA
15
MAX
0.5
3.0
0.20
0.30
0.28
0.50
0.95
1.20
1.70
120
UNITS
V
V
V
V
mA
mW
°C
°C/W
UNITS
µA
µA
V
V
V
V
V
V
V
V
V
V
V
R3 (1-February 2010)