CMPT3646 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

CMPT3646
Central^TM
Semiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION:
SOT-23 CASE
The CENTRAL SEMICONDUCTOR
CMPT3646 type is an NPN Silicon Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current, ultra high speed
switching applications.
Marking code is C2R.
MAXIMUM RATINGS (TA=25^oC)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
40
40
15
5.0
200
350
-65 to +150
357
UNITS
V
V
V
V
mA
mW
o_C
o_C/W
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
SYMBOL
ICES
ICES
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
TEST CONDITIONS
MIN
VCE=20V
VCE=20V,
TA=65^oC
IC=100µA
40
IC=10µA
40
IC=10mA
15
IE=100µA
5.0
IC=30mA,
IC=30mA,
IB=3.0mA
IB=3.0mA,
TA=65^oC
IC=100mA, IB=10mA
IC=300mA, IB=30mA
IC=30mA, IB=3.0mA
0.75
IC=100mA, IB=10mA
IC=300mA, IB=30mA
VCE=0.4V, IC=30mA
30
VCE=0.5V, IC=100mA
25
MAX
0.5
3.0
0.20
0.30
0.28
0.50
0.95
1.20
1.70
120
UNITS
µA
µA
V
V
V
V
V
V
V
V
V
V
V
170