CMPT3640_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

CMPT3640
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3640 type is
a PNP silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for saturated switching applications.
MARKING CODE: C2J
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICES
ICES
IB
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
fT
Cob
Cib
td
tr
VCE=6.0V
VCE=6.0V, TA=65°C
VCE=6.0V, VEB=0
IC=100µA
12
IC=10mA
12
IE=100µA
4.0
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA, TA=65°C
IC=10mA, IB=0.5mA
0.75
IC=10mA, IB=1.0mA
0.80
IC=50mA, IB=5.0mA
VCE=0.3V, IC=10mA
30
VCE=1.0V, IC=50mA
20
VCE=5.0V, IC=10mA, f=100MHz
500
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
12
12
4.0
80
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
MAX
10
10
10
0.20
0.60
0.25
0.95
1.00
1.50
120
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
MHz
3.5
pF
3.5
pF
10
ns
30
ns
R5 (1-February 2010)