CMPT3410_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR

CMPT3410
SURFACE MOUNT
LOW VCE(SAT)
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3410 type is
a NPN Low VCE(SAT) silicon transistor manufactured
by the epitaxial planar process and epoxy molded in
an SOT-23 surface mount package. This device is
designed for battery driven, handheld devices requiring
high current and Low VCE(SAT).
MARKING CODE: C341
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
40
25
6.0
1.0
1.5
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100μA
40
BVCEO
IC=10mA
25
BVEBO
IE=100μA
6.0
VCE(SAT) IC=50mA, IB=5.0mA
25
VCE(SAT) IC=100mA, IB=10mA
40
VCE(SAT) IC=200mA, IB=20mA
80
VCE(SAT) IC=500mA, IB=50mA
190
VCE(SAT) IC=800mA, IB=80mA
290
VCE(SAT) IC=1.0A, IB=100mA
360
VBE(SAT) IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
MAX
100
100
50
75
150
250
400
450
1.1
0.9
300
10
UNITS
V
V
V
A
A
mW
°C
°C/W
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
MHz
pF
R2 (1-August 2011)