CMPT3019_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR

CMPT3019
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3019 type
is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for very high current, general
purpose amplifier applications.
MARKING CODE: C3A
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
140
80
7.0
500
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=90V
IEBO
VEB=5.0V
BVCBO
IC=100μA
140
BVCEO
IC=30mA
80
BVEBO
IE=100μA
7.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
hFE
VCE=10V, IC=0.1mA
50
hFE
VCE=10V, IC=10mA
90
hFE
VCE=10V, IC=150mA
100
hFE
VCE=10V, IC=500mA
50
fT
VCE=10V, IC=50mA, f=20MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
NF
VCE=10V, IC=100μA,
RS=1.0kΩ, f=1.0kHz
MAX
10
10
0.2
0.5
1.1
300
400
12
60
4.0
UNITS
V
V
V
mA
A
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
MHz
pF
pF
dB
R4 (9-November 2010)