CMPT3019 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

CMPT3019
Central^TM
Semiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION
SOT-23 CASE
MAXIMUM RATINGS (TA=25^oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
Θ_JA
The CENTRAL SEMICONDUCTOR
CMPT3019 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for very high current, general
purpose amplifier applications.
Marking Code is C3A.
120
80
7.0
500
1.0
350
-65 to +150
357
UNITS
V
V
V
A
A
mW
o_C
o_C/W
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
NF
TEST CONDITIONS
MIN
VCB=90V
VEB=5.0V
IC=100µA
120
IC=30mA
80
IE=100µA
7.0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
VCE=10V, IC=0.1mA
50
VCE=10V, IC=10mA
90
VCE=10V, IC=150mA
100
VCE=10V, IC=500mA
50
VCE=10V, IC=50mA, f=1.0MHz 100
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=100mA, RS=1kΩ, f=1.0kHz
166
MAX
10
10
0.2
0.5
1.1
300
12
60
4.0
UNITS
nA
nA
V
V
V
V
V
V
MHz
pF
pF
dB