CMPT2907A_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

CMPT2907A
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2907A
type is a PNP silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal general
purpose and switching applications.
MARKING CODE: C2F
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
60
60
5.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=50V
ICBO
VCB=50V, TA=125°C
ICEV
VCE=30V, VEB=0.5V
BVCBO
IC=10µA
60
BVCEO
IC=10mA
60
BVEBO
IE=10µA
5.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
hFE
VCE=10V, IC=0.1mA
75
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
hFE
VCE=10V, IC=500mA
50
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=2.0V, IC=0, f=1.0MHz
MAX
10
10
50
0.4
1.6
1.3
2.6
300
8.0
30
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
pF
R5 (1-February 2010)