CMPT2907AE_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

CMPT2907AE
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2907AE
is an Enhanced version of the CMPT2907A PNP
Switching transistor in a SOT-23 surface mount
package, designed for switching applications, interface
circuit and driver circuit applications.
MARKING CODE: C2FE
FEATURED ENHANCED SPECIFICATIONS:
♦ BVCBO from 60V min to 90V min. (115V TYP)
♦ VCE(SAT) from 1.6V max to 0.7V max. (0.280V TYP)
♦ hFE from 50 min to 75 min. (110 TYP)
MAXIMUM RATINGS: (TA=25°C)
♦Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
90
60
5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=50V
ICBO
VCB=50V, TA=125°C
ICEV
♦ BVCBO
VCE=30V, VEB=0.5V
IC=10µA
90
115
BVCEO
IC=10mA
60
BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
5.0
0.103
0.280
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
♦ hFE
VCE=10V, IC=0.1mA
100
205
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
♦ hFE
VCE=10V, IC=150mA
VCE=10V, IC=500mA
100
75
110
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=2.0V, IC=0, f=1.0MHz
♦ Enhanced specification
MAX
10
10
50
0.2
0.7
1.3
2.6
UNITS
nA
µA
nA
V
V
V
V
V
V
V
300
MHz
8.0
pF
30
pF
R2 (1-February 2010)