CMPT2907AE Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR

CMPT2907AE
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMPT2907AE is an
Enhanced version of the CMPT2907A PNP
Switching transistor in a SOT-23 surface mount
package, designed for switching applications,
interface circuit and driver circuit applications.
MARKING CODE: C2FE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
♦Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
FEATURED ENHANCED SPECIFICATIONS:
♦ BVCBO from 60V min to 90V min. (115V TYP)
♦ VCE(SAT) from 1.6V max to 0.7V max.(0.280V TYP)
♦ hFE from 50 min to 75 min. (110 TYP)
SYMBOL
VCBO
90
VCEO
60
VEBO
5.0
IC
600
PD
350
UNITS
V
V
V
mA
mW
TJ, Tstg
Θ_JA
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=50V
ICBO
VCB=50V, TA=125°C
ICEV
VCE=30V, VEB=0.5V
♦ ^BVCBO
IC=10µA
90
BVCEO
IC=10mA
60
BVEBO
IE=10µA
5.0
♦^{VCE(SAT) IC=150mA, IB=15mA}
♦^{VCE(SAT) IC=500mA, IB=50mA}
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
♦ ^hFE
VCE=10V, IC=0.1mA
100
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
♦ ^hFE
VCE=10V, IC=500mA
75
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=2.0V, IC=0, f=1.0MHz
TYP MAX
10
10
50
115
0.103 0.2
0.280 0.7
1.3
2.6
205
300
110
8.0
30
UNITS
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
pF
♦ Enhanced specification.
R1 (20-February 2003)