CMPT2369_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR

CMPT2369
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2369 type is
an NPN silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for small signal general purpose
and high speed switching applications.
MARKING CODE: C1J
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
40
40
15
4.5
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=20V
ICBO
VCB=20V, TA=125°C
BVCBO
IC=10µA
40
BVCES
IC=10µA
40
BVCEO
IC=10mA
15
BVEBO
IE=10µA
4.5
VCE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=10mA, IB=1.0mA
0.7
hFE
VCE=1.0V, IC=10mA
40
hFE
VCE=2.0V, IC=100mA
20
Cob
VCB=5.0V, IE=0, f=1.0MHz
fT
VCE=10V, IC=10mA, f=100MHz
500
ts
VCC=3.0V, IC=IB1=IB2=10mA
ton
VCC=3.0V, IC=10mA, IB1=3.0mA
toff
VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA
MAX
0.4
30
0.25
0.85
120
4.0
13
12
18
UNITS
V
V
V
V
mA
mW
°C
°C/W
UNITS
µA
µA
V
V
V
V
V
V
pF
MHz
ns
ns
ns
R5 (1-February 2010)