CMPT2369 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

CMPT2369
Central^TM
Semiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT2369 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for ultra high speed switching
applications.
Marking Code is C1J.
SOT-23 CASE
MAXIMUM RATINGS (TA=25^oC)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
40
40
15
4.5
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
UNITS
V
V
V
V
mA
mW
o_C
o_C/W
SYMBOL
ICBO
ICBO
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
Cob
fT
ts
ton
toff
TEST CONDITIONS
MIN
VCB=20V
VCB=20V, TA=125^oC
IC=10µA
40
IC=10µA
40
IC=10mA
15
IE=10µA
4.5
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
0.7
VCE=1.0V, IC=10mA
40
VCE=2.0V, IC=100mA
20
VCB=5.0V, IE=0, f=1.0MHz
VCE=10V, IC=10mA, f=100MHz
500
VCC=3.0V, IC=IB1=IB2=10mA
VCC=3.0V, IC=10mA, IB1=3.0mA
VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA
MAX
0.4
30
0.25
0.85
120
4.0
13
12
18
UNITS
µA
µA
V
V
V
V
V
V
pF
MHz
ns
ns
ns
160