CMPT2222AE_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR

CMPT2222AE
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2222AE
is an Enhanced version of the CMPT2222A NPN
Switching transistor in a SOT-23 surface mount
package, designed for switching applications, interface
circuit and driver circuit applications.
MARKING CODE: C1PE
FEATURED ENHANCED SPECIFICATIONS:
♦ BV_CBO from 75V min to 100V min. (145V TYP)
♦ V_CE from 1.0V max to 0.5V max. (0.12V TYP)
♦ h_FE from 40 to 60 min. (130 TYP)
♦
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
♦Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
100
45
6.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=60V
ICBO
VCB=60V, TA=125°C
ICEV
VCE=60V, VEB=3.0V
IEBO
♦ BVCBO
♦ BVCEO
VEB=3.0V
IC=10µA
IC=10mA
100
145
45
53
BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
6.0
0.92
0.12
VBE(SAT) IC=150mA, IB=15mA
0.6
VBE(SAT)
♦ hFE
♦ hFE
♦ hFE
♦ hFE
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=1.0V, IC=150mA
100
210
100
205
100
205
75
150
hFE
♦ hFE
VCE=10V, IC=150mA
VCE=10V, IC=500mA
100
60
130
fT
VCE=20V, IC=20mA, f=100MHz
300
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
♦ Enhanced specification
MAX
10
10
10
10
0.15
0.50
1.2
2.0
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
300
MHz
8.0
pF
25
pF
R2 (1-February 2010)