CMPT2222AE Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR

CMPT2222AE
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMPT2222AE is an
Enhanced version of the CMPT2222A NPN
Switching transistor in a SOT-23 surface mount
package, designed for switching applications,
interface circuit and driver circuit applications.
MARKING CODE: C1PE
FEATURED ENHANCED SPECIFICATIONS:
♦ BV_CBO from 75V min to 100V min. (145V TYP)
♦ V_CE from 1.0V max to 0.5V max. (0.12V TYP)
♦ h_FE from 40 to 60 min. (130 TYP)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
100
45
6.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
ICBO
ICEV
IEBO
♦ BVCBO
♦ BVCEO
BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
VBE(SAT)
VBE(SAT)
♦ ^hFE
♦ hFE
♦ hFE
♦ hFE
hFE
♦ hFE
fT
VCB=60V
VCB=60V, TA=125°C
VCE=60V, VEB=3.0V
VEB=3.0V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=1.0V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
100
145
45
53
6.0
0.92
0.12
0.6
100
210
100
205
100
205
75
150
100
60
130
300
MAX
10
10
10
10
0.15
0.50
1.2
2.0
UNITS
nA
µA
nA
nA
V
V
V
V
V
V
V
300
MHz
♦ Enhanced specification.
R1 (20-February 2003)