CMPSH_3 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON SCHOTTKY DIODES

CMPSH-3E
CMPSH-3AE
CMPSH-3CE
CMPSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPSH-3E Series
types are Enhanced Versions of the CMPSH-3 Series
of Silicon Schottky Diodes in an SOT-23 Surface Mount
Package.
SOT-23 CASE
FEATURED ENHANCED SPECIFICATIONS:
♦ I_F from 100mA max to 200mA max.
♦ BV_R from 30V min to 40V min.
♦ V_F from 1.0V max to 0.8V max.
CMPSH-3E:
CMPSH-3AE:
CMPSH-3CE:
CMPSH-3SE:
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MARKING CODE: D95E
MARKING CODE: DB1E
MARKING CODE: DB2E
MARKING CODE: DA5E
♦^{MPeAaXkIMRUepMetRitAivTeINRGevSe:} r⁽s^Te^AV⁼²o⁵lt^°a^Cg⁾e
♦Continuous Forward Current
Peak Repetitive Forward Voltage
Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
40
200
350
750
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
IR
♦BVR
VF
♦^VF
♦VF
♦♦ VF
CT
trr
VR=25V
VR=25V, TA=100°C
IR=100µA
40
IF=2.0mA
IF=15mA
IF=100mA
IF=200mA
VR=1.0V, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
90
500
25
100
50
0.29
0.33
0.37
0.42
0.61
0.80
0.65
1.0
7.0
5.0
♦ Enhanced specification
♦♦ Additional Enhanced specification
UNITS
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
V
pF
ns
R3 (27-January 2010)