CMPSH-3E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES

CMPSH-3E
CMPSH-3AE
CMPSH-3CE
CMPSH-3SE
Central^TM
Semiconductor Corp.
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPSH-3E
Series types are Enhanced Versions of the
CMPSH-3 Series of Silicon Schottky Diodes in an
SOT-23 Surface Mount Package.
SOT-23 CASE
FEATURED ENHANCED SPECIFICATIONS:
♦ I_F from 100 mA max to 200 mA max.
♦ BV_R from 30V min to 40 V min.
♦ V_F from 1.0 V max to 0.8 V max.
CMPSH-3E:
CMPSH-3AE:
CMPSH-3CE:
CMPSH-3SE:
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MARKING CODE: D95E
MARKING CODE: DB1E
MARKING CODE: DB2E
MARKING CODE: DA5E
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
♦Peak Repetitive Reverse Voltage
VRRM
40
♦Continuous Forward Current
IF
200
Peak Repetitive Forward Voltage
IFRM
350
Forward Surge Current, tp=10ms
IFSM
750
Power Dissipation
PD
350
Operating and Storage
Junction Temperature
Thermal Resistance
TJ, Tstg
Θ_JA
-65 to +150
357
UNITS
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
♦^BVR
IR=100µA
40
50
VF
IF=2.0mA
0.29
♦VF
IF=15mA
0.37
♦VF
IF=100mA
0.61
♦♦VF
IF=200mA
0.65
IR
VR=25V
90
IR
VR=25V, TA=100°C
25
CT
VR=1.0V, f=1 MHz
7.0
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
MAX
0.33
0.42
0.80
1.0
500
100
5.0
UNITS
V
V
V
V
V
nA
µA
pF
ns
R2 (6-August 2003)