CMPF4391 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – N-CHANNEL JFET

CMPF4391
CMPF4392
CMPF4393
Central^TM
Semiconductor Corp.
N-CHANNEL JFET
DESCRIPTION:
SOT-23 CASE
MAXIMUM RATINGS (TA=25^oC)
Drain-Gate Voltage
Gate-Source Voltage
Drain-Source Voltage
Gate Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
The CENTRAL SEMICONDUCTOR
CMPF4391 series types are N-Channel Silicon
Field Effect Transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for switching
applications.
Marking Codes are 6J, 6K, and 6G
Respectively.
SYMBOL
VGD
VGS
VDS
IG
PD
TJ,Tstg
Θ_JA
40
40
40
50
350
-65 to +150
357
UNITS
V
V
V
mA
mW
o_C
o_C/W
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
CMPF4391
SYMBOL TEST CONDITIONS
MIN MAX
IGSS
VGS=20V
0.1
IGSS
VGS=20V, TA=100^oC
0.2
IDSS
VDS=20V
50 150
ID(OFF) VDS=20V, VGS=12V
0.1
ID(OFF) VDS=20V, VGS=7.0V
-
ID(OFF) VDS=20V, VGS=5.0V
-
ID(OFF) VDS=20V, VGS=12V,TA=100^oC
0.2
ID(OFF) VDS=20V, VGS=7.0V, TA=100^oC
-
ID(OFF) VDS=20V, VGS=5.0V, TA=100^oC
-
BVGSS IG=1.0µA
40
VGS(OFF) VDS=20V, ID=1.0nA
4.0
10
VGS(f) IG=1.0mA
1.0
VDS(ON) ID=12mA
0.4
VDS(ON) ID=6.0mA
-
VDS(ON) ID=3.0mA
-
CMPF4392
MIN MAX
0.1
0.2
25 75
-
0.1
-
-
0.2
-
40
2.0 5.0
1.0
-
0.4
-
CMPF4393
MIN MAX UNITS
0.1 nA
0.2 µA
5.0 30 mA
-
nA
-
nA
0.1 nA
-
µA
-
µA
0.2 µA
40
V
0.5 3.0
V
1.0
V
-
V
-
V
0.4
V
146