CMPDM7003_15 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

CMPDM7003
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM7003 is
an N-Channel enhancement-mode MOSFET manufactured
by the N-Channel DMOS Process, designed for high
speed pulsed amplifier and driver applications. This
MOSFET offers low rDS(ON) and ESD protection up to
2kV.
MARKING CODE: C7003
SOT-23 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• ESD protection up to 2kV
• Low rDS(ON)
• Low VDS(ON)
• Low threshold voltage
• Fast switching
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
50
50
12
280
1.5
350
-65 to +150
357
UNITS
V
V
V
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=5.0V
IGSSF, IGSSR VGS=10V
IGSSF, IGSSR VGS=12V
IDSS
VDS=50V, VGS=0
BVDSS
VGS=0, ID=10μA
50
VGS(th)
VDS=VGS, ID=250μA
0.49
VSD
VGS=0, IS=115mA
rDS(ON)
VGS=1.8V, ID=50mA
1.6
rDS(ON)
VGS=2.5V, ID=50mA
1.3
rDS(ON)
VGS=5.0V, ID=50mA
1.1
gFS
VDS=10V, ID=200mA
200
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
Qg(tot)
VDS=25V, VGS=4.5V, ID=100mA
0.764
Qgs
VDS=25V, VGS=4.5V, ID=100mA
0.148
Qgd
VDS=25V, VGS=4.5V, ID=100mA
0.156
MAX
100
2.0
2.0
50
1.0
1.4
3.0
2.5
2.0
5.0
50
25
UNITS
nA
μA
μA
nA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
nC
nC
nC
R2 (9-February 2015)