CMPDM7002A_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMPDM7002A
CMPDM7002AG*
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-23 CASE
* Device is Halogen Free by design
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM7002A
and CMPDM7002AG are special versions of the
2N7002 Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. These special devices offer low
rDS(ON) and low VDS _(ON).
MARKING CODES: CMPDM7002A: C702A
CMPDM7002AG*: 702G
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ_JA
60
60
40
280
280
1.5
1.5
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=60V, VGS=0
IDSS
VDS=60V, VGS=0, TJ=125°C
ID(ON)
VGS=10V, VDS=10V
500
BVDSS
VGS=0, ID=10μA
60
VGS(th)
VDS=VGS, ID=250μA
1.0
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
VSD
VGS=0, IS=400mA
rDS(ON)
VGS=10V, ID=500mA
rDS(ON)
VGS=10V, ID=500mA, TJ=125°C
rDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=5.0V, ID=50mA, TJ=125°C
gFS
VDS=10V, ID=200mA
80
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
ton, toff
VDD=30V, VGS=10V, ID=200mA,
RG=25Ω, RL=150Ω
MAX
100
1.0
500
2.5
1.0
0.15
1.2
2.0
3.5
3.0
5.0
5.0
50
25
20
UNITS
V
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
mS
pF
pF
pF
ns
R4 (27-January 2010)