CMPDM7002AE_1310 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

CMPDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM7002AE
is a special ESD protected version of the 2N7002
enhancement-mode N-Channel MOSFET designed for
high speed pulsed amplifier and driver applications.
MARKING CODE: C702E
SOT-23 CASE
APPLICATIONS:
• Load/Power switches
• DC-DC converter circuits
• Power management
FEATURES:
♦• ESD protection up to 1800V
• 350mW power dissipation
• Low gate charge
• Low rDS(ON)
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
♦ Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
60
60
20
300
800
350
-65 to +150
357
UNITS
V
V
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=20V, VDS=0
♦ IDSS
VDS=60V, VGS=0
IDSS
VDS=60V, VGS=0, TJ=125°C
♦ BVDSS
VGS=0, ID=10μA
60
70
VGS(th)
VDS=VGS, ID=250μA
1.2
1.5
VSD
VGS=0, IS=115mA
0.5
♦ rDS(ON)
VGS=10V, ID=500mA
1.0
rDS(ON)
VGS=5.0V, ID=100mA
1.1
rDS(ON)
VGS=2.5V, ID=10mA
3.0
gFS
VDS=10V, ID=200mA
220
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
♦ Enhanced specification
MAX
10
100
500
2.0
1.1
1.4
1.8
6.0
5.0
50
25
UNITS
μA
nA
μA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
R3 (3-October 2013)