CMPDM7002A Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET

CMPDM7002A
N-CHANNEL
ENHANCEMENT-MODE
SURFACE MOUNT MOSFET
SOT-23 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPDM7002A is special version of the 2N7002
Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel
DMOS Process, designed for high speed pulsed
amplifier and driver applications. This special
device offers low rDS(ON) and low VDS _(ON).
Marking Code is C702A.
MAXIMUM RATINGS (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ,Tstg
Θ_JA
60
60
40
280
280
1.5
1.5
350
-65 to +150
357
UNITS
V
V
V
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF
VGS=20V, VDS=0V
IGSSR
VGS=20V, VDS=0V
IDSS
VDS=60V, VGS=0V
IDSS
VDS=60V, VGS=0V, Tj=125°C
ID(ON)
VGS=10V, VDS ≥ 2VDS(ON)
500
BVDSS
VGS=0V, ID=10µA
60
VGS(th)
VDS=VGS, ID=250µA
1.0
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=10V, ID=500mA
rDS(ON)
VGS=10V, ID=500mA, Tj=125°C
rDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=5.0V, ID=50mA, Tj=125°C
gFS
VDS ≥ 2VDS(ON), ID=200mA
80
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
ton
VDD=30V, VGS=10V, ID=200mA,
toff
RG=25Ω, RL=150Ω
VSD
VGS=0V, IS=400mA
MAX
100
100
1.0
500
2.5
1.0
0.15
2.0
3.5
3.0
5.0
5.0
50
25
20
20
1.2
UNITS
nA
nA
µA
µA
mA
V
V
V
V
Ω
Ω
Ω
Ω
mmhos
pF
pF
pF
ns
ns
V
R0 ( 05-December 2001)