CMPDM303NH_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMPDM303NH
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-23F CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM303NH
is a high current N-Channel enhancement-mode
silicon MOSFET, manufactured by the N-Channel
DMOS process, and is designed for high speed pulsed
amplifier and driver applications. This MOSFET offers
high current, low rDS(ON), low threshold voltage, and
low leakage current.
MARKING CODE: 303C
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
• High current (ID=3.6A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
30
12
3.6
14.4
350
-55 to +150
357
UNITS
V
V
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=12V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
0.6
rDS(ON)
VGS=4.5V, ID=1.8A
0.033
rDS(ON)
VGS=2.5V, ID=1.8A
0.042
gFS
VDS=5.0V, ID=3.6A
11.8
Crss
VDS=10V, VGS=0, f=1.0MHz
55
Ciss
VDS=10V, VGS=0, f=1.0MHz
590
Coss
VDS=10V, VGS=0, f=1.0MHz
50
Qg(tot)
VDD=10V, VGS=4.5V, ID=3.6A
5.0
Qgs
VDD=10V, VGS=4.5V, ID=3.6A
0.9
Qgd
VDD=10V, VGS=4.5V, ID=3.6A
1.0
ton
VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω
15
toff
VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω
29
MAX
10
UNITS
μA
1.0
μA
V
1.2
V
0.04
Ω
0.078
Ω
S
pF
pF
pF
13
nC
1.4
nC
2.7
nC
ns
ns
R2 (11-December 2012)