CMPDM302PH_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON ENHANCEMENT-MODE P-CHANNEL MOSFET

CMPDM302PH
SURFACE MOUNT SILICON
ENHANCEMENT-MODE
P-CHANNEL MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM302PH is
a high current P-channel enhancement-mode silicon
MOSFET, manufactured by the P-channel DMOS
process, and is designed for high speed pulsed
amplifier and driver applications. This MOSFET offers
high current, low rDS(ON), low threshold voltage, and
low leakage current.
MARKING CODE: 302C
SOT-23F CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Low rDS(ON) (0.129Ω MAX @ VGS=2.5V)
• High current (ID=2.4A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
30
12
2.4
9.6
350
-55 to +150
357
UNITS
V
V
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=12V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
0.7
rDS(ON)
VGS=4.5V, ID=1.2A
0.050
rDS(ON)
VGS=2.5V, ID=1.2A
0.066
gFS
VDS=5.0V, ID=2.4A
4.6
Crss
VDS=10V, VGS=0, f=1.0MHz
69
Ciss
VDS=10V, VGS=0, f=1.0MHz
800
Coss
VDS=10V, VGS=0, f=1.0MHz
62
Qg(tot)
VDD=10V, VGS=5.0V, ID=2.4A
7.0
Qgs
VDD=10V, VGS=5.0V, ID=2.4A
1.4
Qgd
VDD=10V, VGS=5.0V, ID=2.4A
1.5
ton
VDD=10V, ID=2.4A, RG=10Ω
12
toff
VDD=10V, ID=2.4A, RG=10Ω
17
MAX
100
UNITS
nA
1.0
μA
V
1.4
V
0.091
Ω
0.129
Ω
S
pF
pF
pF
9.6
nC
4.2
nC
2.6
nC
ns
ns
R2 (24-February 2014)