CMPDM203NH Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Product Brief
CMPDM203NH
20V, 3.2A N-Channel MOSFET
in the SOT-23F package
The Central Semiconductor CMPDM203NH is an N-Channel
Enhancement-mode MOSFET that optimizes high current
capability and energy efficiency in the industry standard
SOT-23F package. The combination of high current, low gate
charge and low on-resistance makes this device the ideal
selection for energy sensitive applications that require higher
drain currents.
Features:
• Low rDS(ON) = 0.033Ω @ VGS = 4.5V
• High current ID = 3.2A
• Low gate charge Qgs = 0.8nC
Applications:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
• Motor control
Benefits:
• Energy efficiency
• 9% lower package profile than the SOT-23
• Fast switching speed ton = 6.0ns
Samples and Literature
SOT-23F
Typical Electrical Characteristics
New
SMD
SELECTION
GUIDE
To order samples of this device visit:
www.centralsemi.com/info/CMPDM203NH
TA=25˚C
BVDSS
(V)
MIN
ID
(A)
MAX
20
3.2
VGS(th)
(V)
MIN
MAX
0.6
1.2
Electrical Characteristics
rDS(ON)
@ VGS
(Ω)
(Ω)
(V)
TYP
MAX
0.033
0.05
4.5
0.046
0.07
2.5
@ ID
(A)
1.6
1.6
Order your selection guide today.
Visit: web.centralsemi.com/search/sample.php
Qgs
(nC)
TYP MAX
Ciss
(pF)
TYP
Crss
(pF)
TYP
Thermal Characteristics
PD
(mW)
MAX
TJ, Tstg
(˚C)
MAX
Θ_JA
(˚C/W)
MAX
0.8
1.2
395
44
350 -55 to +150 357
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com