CMPD7006 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE

PRELIMINAR^{CCCCMMMMYPPPPDDDD7777000000006666ACS}
SURFACE MOUNT
VERY HIGH VOLTAGE
SILICON SWITCHING DIODE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMPD7006,
CMPD7006A, CMPD7006C and CMPD7006S
are silicon switching diodes with various diode
configurations, manufactured by the epitaxial
planar process and packaged in an epoxy
molded SOT-23 surface mount case. These
devices are designed for applications requiring
high voltage switching diodes.
SOT-23 CASE
The following configurations are available:
CMPD7006 SINGLE
MARKING CODE: C7006
CMPD7006A DUAL, COMMON ANODE
MARKING CODE: C706A
PRELIMINARY ^{CMPD7006C DUAL, COMMON CATHODE}
CMPD7006S DUAL, IN SERIES
MARKING CODE: C706C
MARKING CODE: C706S
MAXIMUM RATINGS PER DIODE: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1.0 µs
Forward Surge Current, tp=1.0 s
Power Dissipation
Operating and Storage
Junction Temperature
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
600
600
100
300
4.0
1.0
350
-65 to +150
Thermal Resistance
Θ_JA
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IR
IR
BVR
VF
VF
VF
CT
trr
VR=480V
VR=480V, TA=150°C
IR=1.0µA
IF=10mA
IF=50mA
IF=100mA
VR=0V, f=1.0 MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
7.0
600
675
0.88
1.04
1.16
MAX
100
100
1.0
1.2
1.4
5.0
500
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
µA
V
V
V
V
pF
ns
R0 (8-December 2003)