CMPD7000E_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON SWITCHING DIODES

CMPD7000E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, IN SERIES
SILICON SWITCHING DIODES
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD7000E is
an Enhanced version of the CMPD7000 Dual, Series
Configuration, Ultra-High Speed Switching Diode. This
device is manufactured by the epitaxial planar process,
in an epoxy molded surface mount SOT-23 package,
designed for high speed switching applications.
MARKING CODE: C5CE
FEATURED ENHANCED SPECIFICATIONS:
♦ BVR from 100V min to 120V min.
♦ VF from 1.1V max to 1.0V max.
MAXIMUM RATINGS: (TA=25 °C)
♦ Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IO
IFM
PD
TJ, Tstg
Θ_JA
120
200
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
VR=50V
300
IR
VR=50V, TA=125°C
100
IR
♦ BVR
♦ VF
♦ VF
♦ VF
VR=100V
IR=100µA
IF=1.0mA
IF=10mA
IF=100mA
500
120
150
0.55
0.59
0.65
0.67
0.72
0.77
0.85
0.91
1.0
CT
VR=0, f=1.0MHz
1.5
2.6
trr
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
2.0
4.0
♦ Enhanced Specification
UNITS
V
mA
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
pF
ns
R4 (27-January 2010)