CMPD7000E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODE SERIES CONNECTION

CMPD7000E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON SWITCHING DIODE
SERIES CONNECTION
SOT-23 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMPD7000E is an
Enhanced version of the CMPD7000 Dual,
Series Configuration, Ultra-High Speed
Switching Diode. This device is manufactured by
the epitaxial planar process, in an epoxy molded
surface mount SOT-23 package, designed for
high speed switching applications.
MARKING CODE: C5CE
FEATURED ENHANCED SPECIFICATIONS:
♦ BVR from 100V min to 120V min.
♦ VF from 1.1V max to 1.0V max.
MAXIMUM RATINGS (TA=25 °C)
♦ Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IO
IFM
PD
TJ,Tstg
Θ_JA
120
200
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
♦ BVR
IR
IR
IR
♦ VF
♦ _VF
♦ _VF
CT
trr
IR=100µA
VR=50V
VR=50V, TA=125°C
VR=100V
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f=1 MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
120
150
300
100
500
0.55 0.59 0.65
0.67 0.72 0.77
0.85
0.91
1.0
1.5
2.0
4.0
UNITS
V
mA
mA
mW
°C
°C/W
UNITS
V
nA
µA
nA
V
V
V
pF
ns
♦ Enhanced Specification
R2 (6-August 2003)