CMPD6001_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODES

CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
SURFACE MOUNT
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD6001 series
types are silicon switching diodes manufactured by
the epitaxial planar process, designed for switching
applications requiring an extremely low leakage diode.
SOT-23 CASE
The following configurations are available:
CMPD6001 SINGLE
CMPD6001A DUAL, COMMON ANODE
CMPD6001C DUAL, COMMON CATHODE
CMPD6001S DUAL, IN SERIES
MARKING CODE: ULO
MARKING CODE: ULA
MARKING CODE: ULC
MARKING CODE: ULS
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
75
100
250
250
4.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=75V
500
BVR
IR=100μA
100
VF
IF=1.0mA
0.85
VF
IF=10mA
0.95
VF
IF=100mA
1.1
CT
VR=0, f =1.0MHz
2.0
trr
IR=IF=10mA, Irr=1.0mA, RL=100Ω
3.0
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
pA
V
V
V
V
pF
μs
R5 (9-May 2011)