CMPD5001_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE

CMPD5001
CMPD5001S
SURFACE MOUNT
HIGH CURRENT
INDUCTIVE LOAD
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD5001 series
types are silicon switching diodes manufactured by
the epitaxial planar process, designed for switching
applications requiring extremely high current capability.
SOT-23 CASE
The following configurations are available:
CMPD5001
CMPD5001S
SINGLE
DUAL, IN SERIES
MARKING CODE: DA2
MARKING CODE: D49
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
IF
IFRM
IRRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
120
400
800
600
6.0
1.5
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=90V
100
IR
VR=90V, TA=150°C
100
BVR
IR=50μA
120
325
VF
IF=10mA
0.75
VF
IF=50mA
0.84
VF
IF=100mA
0.90
VF
IF=200mA
1.00
VF
IF=400mA
1.25
CT
VR=0, f=1.0MHz
35
trr
IR=IF=30mA, Irr=3.0mA, RL=100Ω
60
trr
IR=IF=10mA, Irr=3.0mA, RL=100Ω
50
UNITS
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
V
V
pF
ns
ns
R4 (25-January 2010)