CMPD5001 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE

CMPD5001
CMPD5001S
HIGH CURRENT
INDUCTIVE LOAD
SWITCHING DIODE
Central^TM
Semiconductor Corp.
DESCRIPTION:
SOT-23 CASE
The following configurations are available:
The CENTRAL SEMICONDUCTOR
CMPD5001 series types are silicon switching
diodes manufactured by the epitaxial planar
process, designed for switching inductive load
applications requiring extremely high current
capability.
CMPD5001
CMPD5001S
SINGLE
DUAL, IN SERIES
MARKING CODE: DA2
MARKING CODE: D49
MAXIMUM RATINGS (TA=25oC)
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Forward Surge Current, tp=1 µs
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
IF
IFRM
IRRM
IFSM
IFSM
PD
TJ,Tstg
Θ_JA
120
400
800
600
6000
1500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
UNITS
V
mA
mA
mA
mA
mA
mW
oC
oC/W
SYMBOL
BVR
IR
IR
VF
VF
VF
VF
TEST CONDITIONS
IR=1.0mA
VR=90V
VR=90V, TA=150oC
IF=10mA
IF=50mA
IF=100mA
IF=200mA
MIN
MAX
UNITS
120
175
V
100
nA
100
µA
0.75
V
0.84
V
0.90
V
1.00
V
140