CMPD2836E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES

CMPD2836E
CMPD2838E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON
SWITCHING DIODES
SOT-23 CASE
The following configurations are available:
CMPD2836E
DUAL, COMMON ANODE
CMPD2838E
DUAL, COMMON CATHODE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMPD2836E and
CMPD2838E are Enhanced versions of the
CMPD2836 and CMPD2838 High Speed
Switching Diodes. These devices are
manufactured by the epitaxial planar process, in
an epoxy molded surface mount SOT-23
package, designed for high speed switching
applications.
FEATURED ENHANCED SPECIFICATIONS:
♦ BVR from 75V min to 120V min.
♦ VF from 1.2V max to 1.0V max.
MARKING CODE: CA2E
MARKING CODE: CA6E
MAXIMUM RATINGS (TA=25 °C)
♦ Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current (tp=1.0 s)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IO
IFM
PD
TJ,Tstg
Θ_JA
120
200
300
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
♦ BVR
♦ ^IR
♦ ^VF
♦ VF
♦ VF
CT
trr
TEST CONDITIONS
IR=100µA
VR=80V
IF=10mA
IF=50mA
IF=100mA
VR=0, f=1 MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
MIN TYP MAX
120
150
100
0.72 0.85
0.84 0.95
0.92
1.0
1.5
4.0
4.0
UNITS
V
mA
mA
mW
°C
°C/W
UNITS
V
nA
V
V
V
pF
ns
♦ Enhanced specification.
R2 (6-August 2003)