CMPD2005S Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES

CMPD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD2005S contains two (2) High Voltage
Silicon Switching Diodes, manufactured by the
epitaxial planar process, epoxy molded in a
SOT-23 surface mount package, designed for
applications requiring high voltage capability.
MARKING CODE: DB5
SOT-23 CASE
MAXIMUM RATINGS (TA=25 °C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp= 1 µs
Forward Surge Current, tp= 1s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
Θ_JA
300
350
200
225
625
4.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
IR
VR=280V
100
IR
VR=280V, TA=150°C
100
BVR
IR=100µA
350
VF
IF=20mA
0.87
VF
IF=100mA
1.0
VF
IF=200mA
1.25
CT
VR=0, f=1.0 MHz
5.0
trr
IR=IF=30mA, Rec. to 3.0mA, RL=100Ω
50
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
µA
V
V
V
V
pF
ns
R1 (6-August 2003)