CMPD2003_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE

CMPD2003
CMPD2003A
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004A
CMPD2004C
CMPD2004S
SURFACE MOUNT
HIGH VOLTAGE
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2003,
CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004,
CMPD2004A, CMPD2004C and CMPD2004S types
are silicon switching diodes manufactured by the
epitaxial planar process, designed for applications
requiring high voltage capability.
SOT-23 CASE
The following configurations are available:
CMPD2003
SINGLE
CMPD2003A DUAL, COMMON ANODE
CMPD2003C DUAL, COMMON CATHODE
CMPD2003S DUAL, IN SERIES
CMPD2004
SINGLE
CMPD2004A DUAL, COMMON ANODE
CMPD2004C DUAL, COMMON CATHODE
CMPD2004S DUAL, IN SERIES
MARKING CODE: A82
MARKING CODE: 8A2
MARKING CODE: C3C
MARKING CODE: C3S
MARKING CODE: D53
MARKING CODE: DB8
MARKING CODE: DB7
MARKING CODE: DB6
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Average Forward Current
Continous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
CMPD2003
CMPD2004
CMPD2003A CMPD2004A
CMPD2003C CMPD2004C
CMPD2003S CMPD2004S
200
240
250
300
200
200
250
225
625
4.0
1.0
350
-65 to +150
357
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
R9 (25-January 2010)