CMPD2003-1 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE

CMPD2003
É'” CMPD2003C
 ^ CMPD2003S
CMPD2004
É'” CMPD2004C
CMPD2004S
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
Central^TM
Semiconductor Corp.
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMPD2003,
CMPD2003C, CMPD2003S, CMPD2004,
CMPD2004C, and CMPD2004S types are silicon
switching diodes manufactured by the epitaxial
planar process, designed for applications
requiring high voltage capability.
SOT-23 CASE
The following configurations are available:
CMPD2003
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004C
CMPD2004S
SINGLE
DUAL, COMMON CATHODE
DUAL, IN SERIES
SINGLE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MARKING CODE: A82
MARKING CODE: C3C
MARKING CODE: C3S
MARKING CODE: D53
MARKING CODE: DB7
MARKING CODE: DB6
MAXIMUM RATINGS (TA=25°C)
Continuous Reverse Voltage
Peak RepetitiveReverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 ms
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
Q_JA
CMPD2003 CMPD2004
CMPD2003C CMPD2004C
CMPD2003S CMPD2004S
200
240
250
300
200
200
250
225
625
625
4000
4000
1000
1000
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
BVR
IR
TEST CONDITIONS
IR=100mA
VR=200V
CMPD2003
CMPD2003C
CMPD2003S
MIN MAX
250
100
CMPD2004
CMPD2004C
CMPD2004S
MIN MAX
300
-
170
UNITS
V
V
mA
mA
mA
mA
mA
mW
°C
°C/W
UNIT
V
nA