CMPD1001_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE

CMPD1001
CMPD1001A
CMPD1001S
SURFACE MOUNT
HIGH CURRENT
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD1001 series
types are silicon switching diodes manufactured by
the epitaxial planar process, designed for applications
requiring high current capability.
SOT-23 CASE
The following configurations are available:
CMPD1001
CMPD1001A
CMPD1001S
SINGLE
DUAL, COMMON ANODE
DUAL, IN SERIES
MARKING CODE: L20
MARKING CODE: L22
MARKING CODE: L21
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
IF
IFRM
IRRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
90
250
600
600
6.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IR
VR=90V
IR
VR=90V, TA=150°C
BVR
IR=100μA
90
VF
IF=10mA
VF
IF=50mA
VF
IF=100mA
VF
IF=200mA
VF
IF=400mA
CT
VR=0, f=1.0MHz
trr
IR=IF=30mA, Rec. to 3.0mA, RL=100Ω
MAX
100
100
0.75
0.84
0.90
1.00
1.25
35
50
UNITS
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
V
V
pF
ns
R6 (25-January 2010)