CMPD1001 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH CURRENT SWITCHING DIODE

CMPD1001
CMPD1001A
CMPD1001S
HIGH CURRENT
SWITCHING DIODE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD1001 series types are silicon switching
diodes manufactured by the epitaxial planar
process, designed for applications requiring
high current capability.
SOT-23 CASE
The following configurations are available:
CMPD1001
CMPD1001S
CMPD1001A
SINGLE
DUAL, IN SERIES
DUAL, COMMON ANODE
MARKING CODE: L20
MARKING CODE: L21
MARKING CODE: L22
MAXIMUM RATINGS (TA=25oC)
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Forward Surge Current, tp=1 µs
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
IF
IFRM
IRRM
IFSM
IFSM
PD
TJ,Tstg
Θ_JA
90
250
600
600
6000
1000
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL
BVR
IR
IR
VF
TEST CONDITIONS
MIN
MAX
IR=100 µA
90
VR=90V
100
VR=90V, TA=150oC
100
IF=10mA
0.75
UNITS
V
mA
mA
mA
mA
mA
mW
oC
oC/W
UNIT
V
nA
µA
V
130