CMOSH-4E_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE

CMOSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODE
SOD-523 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMOSH-4E is an
Enhanced version of the CMOSH-3 Silicon Schottky
Diode in an SOD-523 Surface Mount Package.
MARKING CODE: 4E
ENHANCED SPECIFICATIONS:
♦ IF from 100mA max to 200mA max.
♦ BVR from 30V min to 40Vmin.
♦ VF from 1.0V max to 0.8V max.
MAXIMUM RATINGS: (TA=25°C)
♦Peak Repetitive Reverse Voltage
♦Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
40
200
350
750
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IR
VR=25V
90
IR
♦BVR
VR=25V, TA=100°C
IR=100µA
25
40
50
VF
IF=2.0mA
0.29
♦VF
IF=15mA
0.37
♦VF
IF=100mA
0.61
♦♦ VF
IF=200mA
0.65
CT
VR=1.0V, f=1.0MHz
7.0
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
MAX
500
100
0.33
0.42
0.80
1.0
5.0
UNITS
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
V
pF
ns
R2 (25-January 2010)