CMNT3904E_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR

CMNT3904E NPN
CMNT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTOR
SOT-953 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMNT3904E
and CMNT3906E Low VCE(SAT) NPN and PNP
Transistors, respectively, are designed for applications
where ultra small size and power dissipation are the
prime requirements. Packaged in an FEMTOmini™
SOT-953 package, these components provide
performance characteristics suitable for the most
demanding size constrained applications.
MARKING CODES: CMNT3904E: CL
CMNT3906E: CM
FEATURES
• Very Small Package Size
• Low Package Profile, 0.5mm
• 200mA Collector Current
• Low VCE(SAT) (0.1V Typ @ 50mA)
• Small, FEMTOmini™ 1 x 0.8mm,
SOT-953 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
Collector-Emitter Voltage
♦ Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
APPLICATIONS
• DC / DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered equipment including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
60
40
6.0
200
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
SYMBOL
TEST CONDITIONS
MIN
TYP
ICEV
♦ BVCBO
BVCEO
♦ BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
VBE(SAT)
VBE(SAT)
♦ hFE
♦ hFE
VCE=30V, VEB=3.0V
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
60
115
40
60
6.0
7.5
.057
0.1
0.65 0.75
0.85
90
240
100
235
♦ Enhanced Specification
PNP
TYP
90
55
7.9
.05
0.1
0.75
0.85
130
150
MAX
50
0.1
0.2
0.85
0.95
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
V
V
V
V
V
V
V
R2 (25-January 2010)