CMNT3904E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS

CMNT3904E NPN
CMNT3906E PNP
ENHANCED SPECIFICATION
COMPLEMENTARY FEMTOmini^TM
SILICON TRANSISTORS
SOT-953 CASE
FEATURES
• Very Small Package Size
• Low Package Profile, 0.5mm
• 200mA Collector Current
• Low VCE(SAT) (0.1V Typ @ 50mA)
• Small, FEMTOmini™ 1 x 0.8mm,
SOT-953 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
Collector-Emitter Voltage
♦ Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMNT3904E/CMNT3906E
Low VCE _(SAT) NPN and PNP Transistors, respectively,
are designed for applications where ultra small size and
power dissipation are the prime requirements.
Packaged in an FEMTOmini™ SOT-953 package,
these components provide performance characteristics
suitable for the most demanding size constrained
applications.
CMNT3904E MARKING CODE: CL
CMNT3906E MARKING CODE: CM
APPLICATIONS
• DC / DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered equipment including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
60
40
6.0
200
250
-65 to +150
500
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
SYMBOL
TEST CONDITIONS
MIN
TYP
ICEV
♦ BVCBO
BVCEO
♦ BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
VBE(SAT)
VBE(SAT)
♦ hFE
♦ hFE
VCE=30V, VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
60
115
40
60
6.0
7.5
.057
0.1
0.65 0.75
0.85
90
240
100
235
♦ Enhanced Specification
PNP
TYP
90
55
7.9
.05
0.1
0.75
0.85
130
150
MAX
50
0.1
0.2
0.85
0.95
UNITS
nA
V
V
V
V
V
V
V
R1 (18-January 2008)