CMNDM8001_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMNDM8001
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMNDM8001 is
a P-Channel Enhancement-mode Silicon MOSFET,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers Low rDS(ON) and
Low Threshold Voltage.
MARKING CODE: BC
SOT-953 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
FEATURES:
• Low 0.5mm Package Profile
• Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953
Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
20
10
100
200
250
-65 to +150
UNITS
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=10V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=100μA
20
VGS(th)
VDS=VGS, ID=250μA
0.6
rDS(ON)
VGS=4.0V, ID=10mA
1.9
rDS(ON)
VGS=2.5V, ID=10mA
2.4
rDS(ON)
VGS=1.5V, ID=1.0mA
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
0.658
Qgs
VDS=10V, VGS=4.5V, ID=100mA
0.158
Qgd
VDS=10V, VGS=4.5V, ID=100mA
0.181
gFS
VDS =10V, ID=100mA
100
Crss
VDS=3.0V, VGS=0, f=1.0MHz
15
Ciss
VDS=3.0V, VGS=0, f=1.0MHz
45
Coss
VDS=3.0V, VGS=0, f=1.0MHz
15
ton
VDD=3.0V, VGS=2.5V, ID=10mA
35
toff
VDD=3.0V, VGS=2.5V, ID=10mA
80
MAX
1.0
1.0
1.1
8.0
12
45
UNITS
μA
μA
V
V
Ω
Ω
Ω
nC
nC
nC
mS
pF
pF
pF
ns
ns
R3 (22-August 2011)