CMLT8099M_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR

CMLT8099M
SURFACE MOUNT SILICON
DUAL, MATCHED
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT8099M
consists of two individual, isolated 8099 NPN silicon
transistors with matched VBE(ON) characteristics.
This device is manufactured by the epitaxial planar
process and epoxy molded in an
SOT-563 surface mount package.
MARKING CODE: 8CM
SOT-563 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Small signal general purpose amplifiers
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Transistor pair matched for VBE(ON)
SYMBOL
UNITS
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
80
80
6.0
500
350
-65 to +150
357
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=80V
0.1
IEBO
VBE=6.0V
0.1
BVCBO
IC=100μA
80
BVCEO
IC=10mA
80
BVEBO
IE=10μA
6.0
VCE(SAT)
IC=100mA, IB=5.0mA
0.4
VCE(SAT)
IC=100mA, IB=10mA
0.3
VBE(ON)
VCE=5.0V, IC=10mA
0.6
0.8
hFE
VCE=5.0V, IC=1.0mA
100
300
hFE
VCE=5.0V, IC=10mA
100
hFE
VCE=5.0V, IC=100mA
75
fT
VCE=5.0V, IC=10mA, f=100MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
Cib
VBE=0.5V, IC=0, f=1.0MHz
25
UNITS
μA
μA
V
V
V
V
V
V
MHz
pF
pF
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
VCE=5.0V, IC=1.0μA
VCE=5.0V, IC=5.0μA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=100μA
MIN
MAX
UNITS
10
mV
10
mV
10
mV
10
mV
R3 (29-June 2015)